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| A. Ciências Exatas e da Terra - 3. Física - 1. Áreas Clássicas de Fenomenologia e suas Aplicações | ||
| SIMULATION AND ANALYSIS OF IRREGULAR SURFACES: APPLICATIONS FOR NANOSTRUCTURED ACTIVE MATERIALS | ||
| Mariana Pelissari Monteiro Aguiar Baroni 1 (mariana@lac.inpe.br), Reinaldo Roberto Rosa 1, Antônio Ferreira da Silva 2, Lucimara Stolz Roman 3, Lucia Vieira Santos 4, Fernando Manuel Ramos 1 e Clas Persson 5 | ||
| (1. Lab. Associado de Computação e Matemática Aplicada, Instituto Nacional de Pesquisas Espaciais - INPE; 2. Instituto de Física, Universidade Federal da Bahia - UFBa; 3. Departamento de Física, Universidade Federal do Paraná - UFPR.; 4. Laboratório Associado de Sensores e Materiais, Instituto Nacional de Pesquisas Espaciais - INPE.; 5. Department of Materials Science and Engineering, Royal Institute of Technology) | ||
| INTRODUÇÃO:
In this work, we present a computational study of 2D irregular pattern formation models and a more general concept of universality class. |
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| METODOLOGIA:
We solve the equations for: (i) ballistic deposition; (ii) random deposition; and (iii) KPZ. Due to its physical properties, the solutions from KPZ 2D is adopted to simulate the structure of porous materials interface whose spatial characteristics are equivalent those finding in porous silicon and PDLC (Porous Diamond-Like-Carbon) samples. The analysis of the simulated and real SFM (Scanning Force Microscopy) surfaces was done using both scaling concepts and the Gradient Pattern Analysis (GPA). |
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| RESULTADOS:
We found that the asymmetries during the surface formation is driven by a 1/fγ noise power-law with γ ~ 0.64. A classification of global and local structural patterns is considered discussing its importance for the area of nanostructured porous materials with prominence for the application in opto-electronic devices. |
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| CONCLUSÕES:
A new universality class for the 2D KPZ equation is given by the multi-scalar χ = (β, Γ, W, g1a, CA) = (0.43±0.09, 0.06±0.05, 0.46±0.40, 1.97±0.01, 0.20±0.01) composed by growth exponent, aspect ratio, interface width, asymmetric moment and degree of complexity by asymmetry, respectively. |
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| Instituição de fomento: Coordenação de Aperfeiçoamento de Pessoal de Nível Superior - CAPES | ||
| Palavras-chave: KPZ equation; universality class; porous silicon. | ||
| Anais da 57ª Reunião Anual da SBPC - Fortaleza, CE - Julho/2005 |